Samsung has begun mass production on solid state drives (SDDs) that feature the organization’s 6th generation 256GB three-bit vertical NAND memory.
This implies the drives accompany an industry first 100 layers of NAND cells, a composition speed of 450 microseconds and a reading response time of 45 microseconds.
Contrasted with Samsung’s past 90-layer SSDs, performance is up 10 percent and power consumption down 15 percent, as indicated by the organization.
The 6th generation V-NAND comes only 13 months after the launch of the past iteration – lessening the mass production cycle by four months.
This is key for various reasons, not least the fact that the NAND oversupply has prompted a pricing war among providers.
“By bringing cutting-edge 3D memory technology to volume production, we are able to introduce timely memory lineups that significantly raise the bar for speed and power efficiency,” said Kye Hyun Kyung, executive vice president of solution product & development at Samsung Electronics. He added that thanks to faster development cycles, Samsung plans to “rapidly expand” the SDD market.
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